Abstract
We report the demonstration of resonant tunneling of holes through an AlAs/GaAs0.7P0.3 double-barrier heterostructure. The tensile strain in the quantum well is large enough to reverse the order of the light- and heavy-hole levels (the first light-hole level is the ground state). The I(V) characteristic of this structure is measured and compared to a standard AlAs/GaAs unstrained one. As expected, the peak current density of the first light-hole resonance and its peak-to-valley current ratio are enhanced (they reach 28 A/cm2 and 3.4:1 at 15 K). Negative differential resistance is observed up to 250 K.
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