Abstract
In this work, a silicon nanowire solar cell for efficient light harvesting in the visible and near-infrared regions is introduced. In this structure, the silicon nanowires (SiNWs) are coated with a graphene layer and plasmonic nanoparticles are distributed on the top surface of the silicon substrate layer. The proposed structure is simulated using the finite difference time domain (FDTD) method to determine the performance of the solar cell by calculating the open-circuit voltage, fill factor, short-circuit current density, and power conversion efficiency. The absorbed light energy is compared for different nanoparticle materials, namely Au, Ag, Al, and Cu, and Au NPs give the best performance. Different values of the radius of the Au NP are simulated, namely 30, 40, 50, and 60 nm, to determine the optimum radius, and the effect of excess carrier concentration on the solar cell performance is also tested. The obtained open-circuit voltage is 0.63 V, fill factor is 0.73, short-circuit current density is 41.7 mA/cm2, and power conversion efficiency is 19.0%. The proposed SiNW solar cell improves the overall efficiency by almost 60%. Furthermore, the effects of the NW length and distance between NWs are also studied in this work. Finally, the distribution of the optical power in different layers along the solar cell and for different solar cell structures is also illustrated in this paper.
Highlights
Crystalline silicon nanowires (SiNWs) usually exhibit a highly efficient light absorption and an antireflection of the incident light greater than that of a flat surface silicon material of the same size [1]
One more advantage of the SiNW solar cell is the simplicity of the fabrication process with a large-area scalable structure, as introduced by Garnett and Yang [5]
The experimental results illustrated that the maximum obtained open-circuit voltage from the solar cell is 0.82 V and the FF is 0.73, while the short-circuit current density is 15.2 mA/cm2, which leads to a power conversion efficiency of 9.3%
Summary
Crystalline silicon nanowires (SiNWs) usually exhibit a highly efficient light absorption and an antireflection of the incident light greater than that of a flat surface silicon material of the same size [1]. One more advantage of the SiNW solar cell is the simplicity of the fabrication process with a large-area scalable structure, as introduced by Garnett and Yang [5] This process produced a high open-circuit voltage value, Voc , and high fill factor, FF, which lead to producing higher overall efficiency, μ, of the solar cell for high values of short-circuit current density, Jsc. we still need to increase the value of the Jsc , which can be obtained by using an absorber layer, such as graphene, C [6]. The experimental results illustrated that the maximum obtained open-circuit voltage from the solar cell is 0.82 V and the FF is 0.73, while the short-circuit current density is 15.2 mA/cm , which leads to a power conversion efficiency of 9.3%. The optical power distribution in different monitoring layers for different proposed solar cell structures is given in this work
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