Abstract
Antireflective non-periodic and periodic sub-wavelength structures (SWSs) are fabricated on indium tin oxide (ITO) layers deposited on p-GaN layers of GaN-based green light-emitting diodes (LEDs). The light output powers of the LEDs using non-periodic and periodic SWSs are increased by 18% and 39% at a 20-mA input current, respectively, compared to LEDs with flat ITO layers. Periodic ITO SWSs show a larger enhancement of output power because they have more effective profiles of the graded refractive index. The output power of periodic SWS LEDs is improved in all angular directions, indicating that the improved output power is attributed to lower total internal reflection and lower Fresnel reflection.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
