Abstract
In this study, enhanced light output power in GaN-based light-emitting diodes (LEDs) with a nanotextured indium tin oxide (ITO) transparent conductive layer was observed. Wafer-scale self-assembled cesium chloride nanospheres were formed on the ITO transparent conductive layer and served as the mask in a dry etching process. After the inductively coupled plasma (ICP) etching process, nanoscale islands were fabricated on the ITO layer. Compared with LEDs with a planar ITO layer, the light output power of LEDs with a nanotextured ITO layer was improved by 23.4%. Optoelectronic measurement showed that the performance of the fabricated LEDs was greatly enhanced.
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