Abstract
We have improved the emission properties and the carrier mobilities of organic light-emitting field-effect transistors (OLEFETs) by modifying the metal electrode(s) with a thin film of n-type thiophene/phenylene co-oligomer (TPCO). Their semiconductor layer was a p-type TPCO crystal. When we used the modified electrode for electron injection, the device exhibited eight times higher emission intensity than a device with unmodified electrodes. By contrast, employing the modified electrode as the hole injection contact, we achieved the maximum hole mobility of 0.11 cm2·V-1·s-1 under the hole-enhancement mode. The modified electrodes effectively functioned for injecting both electrons and holes into the p-type crystal. The origin of this is briefly discussed.
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