Abstract
Light emitting diodes (LED), continuously operable at room temperature, have been fabricated by Si + ion implantation into SiO 2 and subsequent annealing in order to form Si nanocrystals. A highly doped poly-Si layer was used to enhance injection into nanocrystals. Visible electroluminescence (EL) was observed from the LEDs with oxide thickness ⩽180 Å for bias voltages above 8 V. The EL decay transient was similar to stretched-exponential decays observed for photoluminescence (PL) from Si nanocrystals.
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