Abstract
AbstractWe report the light‐emitting diode (LED) characteristics of colloidal core‐shell CdSe/ZnS nanocrystal quantum dots (QDs) embedded in TiO2–δ thin films on Si substrate. High‐quality CdSe/ZnS QDs were synthesized via a pyrolysis in the range of 220–280 °C. The QDs were embedded in TiO2–δ thin film at 200 °C by plasma‐enhanced metallorganic chemical vapor deposition. The diode structure of n‐TiO2–δ /QDs/p‐Si showed electroluminescence characteristics, indicating the possibility of LED applications of colloidal CdSe/ZnS nanocrystal QDs embedded in oxide films on large‐area Si wafer. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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