Abstract
Light emission microscopy is now recognized as a powerful technique for failure analysis and reliability studies in Integrated Circuits. In this paper, the light emission technique is presented with a critical analysis of the different elements that may improve its detection level. The different sources of light emission in Integrated Circuits are reported and the origin of light emission with a review of the different proposed mechanisms is discussed. The influence of the silicon substrate and poly silicon layers on electro-luminescence sensitivity is highlighted. The main applications of light emission microscopy to reliability in VLSI circuits are also reviewed, including hot carrier effects, thin oxide reliability, ESD, latch-up. Finally, the latest innovations in light emission microscopy are presented.
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