Light emission from erbium-doped nanostructures embedded in silicon microcavities

Abstract

We present the findings of high-efficient Er 3+-related 4 I 13/2↔ 4 I 15/2 absorption and emission from self-assembled quantum wells (SQW) embedded in silicon microcavities. The microcavities are prepared by the short-time diffusion of boron into the Si (1 0 0) wafer doped with erbium. The intraband electron transitions accompanied by tunneling through strongly coupled SQW series are observed to excite the 4 I 13/2↔ 4 I 15/2 Er 3+ -intracenter emission, 1.54 μm , that is enhanced by strong sp–f mixing in the range of the Rabi splitting revealed by the transmission spectra.