Abstract
We demonstrate the feasibility to obtain electroluminescence (EL), up to room temperature, from InGaAs self-assembled quantum dots (QDs) included in a forward-biased Schottky diode. Moreover, using a ferromagnet (FM) as the contact layer, sizable circular polarization of the EL emission in the presence of an external magnetic field is obtained. A resonant behavior of the degree of circular polarization (P) as a function of the applied voltage (V), for a given value of magnetic field, is observed. We explain our findings using a model including tunneling of (spin-polarised) holes through the metal-semiconductor interface, transport in the near-surface region of the heterostructure and out-of-equilibrium statistics of the injected carriers occupying the available states in the QD heterostructure. In particular, the resonant P(V) dependence is related to the splitting of the quasi-Fermi level for two spin orientations in the FM.
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