Abstract
We present a new concept for the optical interfacing between vertical III-As nanowires and planar Si waveguides. The nanowires are arranged in a two-dimensional array which forms a grating structure on top of the waveguide. This grating enables light coupling in both directions between the components made from the two different material classes. Numerical simulations show that this concept permits a light extraction efficiency from the waveguide larger than 45% and a light insertion efficiency larger than 35%. This new approach would allow the monolithic integration of nanowire-based active optoelectronics devices, like photodetectors and light sources, on the Si photonics platform.
Highlights
Optical interconnects have been proposed for future technology generations in Si microelectronics, because limitations in bandwidth of electrical interconnects are predicted to become a serious bottleneck [1]
We present a new concept for the optical interfacing between vertical III-As nanowires and planar Si waveguides
The results shown demonstrate that our new light coupling concept enables the use of vertical core-shell nanowires as photodetectors for planar Si waveguides
Summary
Optical interconnects have been proposed for future technology generations in Si microelectronics, because limitations in bandwidth of electrical interconnects are predicted to become a serious bottleneck [1]. In particular the compound semiconductor classes group-III-arsenides and phosphides are under consideration, since they offer direct bandgaps of an energy where Si is transparent and can be employed for light guiding The integration of these materials on Si is, not trivial, because of the large mismatch in lattice constants and thermal expansion coefficients. Even though interesting results have been presented, none of these concepts could demonstrate at the same time device-level material quality, efficient and compact light coupling to waveguides, and the capability for large-scale integration In view of these limitations, there is still a strong need for a novel approach to the integration of active III-V components on Si waveguides that would fulfill the indicated requirements. We analyze the optical interaction between vertical nanowires and planar waveguides in order to design usable systems
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