Abstract
An optoelectronic memristor can respond to both electrical and optical stimuli, which has tremendous potential to realize light-involved operations. Here, N-doped carbon dots (NCDs)-based optoelectronic memristor devices with reliable resistive switching (RS) characteristics are demonstrated. The devices possess reproducible bipolar RS behavior, good endurance, long retention time, and fast switching speed (<28 ns). Based on the light-controlled charge trapping, the SET voltage can be modulated from 1.5 to 0.2 V by varying the ultraviolet (UV) light intensity. Furthermore, the switching process can be completely triggered by external light when the intensity is more than 10 mW/cm2. The mechanism of charge trapping of the NCDs is verified via Kelvin probe force microscopy measurements. The stateful reconfigurable logic of NAND and AND operations can be achieved through the control of UV light. The results show the feasibility of light-controlled stateful logic based on NCDs memristors for in-memory computing applications.
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