Abstract
In this work, we propose a technique to enhance the confinement of light at 90o sharp bend of a double high mesa slot (DHMS) waveguide based on Silicon on Insulator (SOI). These waveguides deliver high electric field and optical power density in low refractive index Nano-metric slot. The slot is displaced to the inner and outer periphery of the bend and explores the deviation in the relative power. The maximum relative power is attained by shifting the slot towards the outer periphery of the bend. This is only conceivable by choosing the precise slot position where the two evanescent tails of the high index waveguide modes have maximum overlap.
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