Abstract
All-inorganic perovskite quantum dots (APQDs) have emerged as excellent materials which have been widely used in numerous micro-nano photoelectric devices. However, resistive random access memory (RRAM) devices based on APQDs are relatively scarce. In this work, RRAM based on CsPbBr3 APQDs prepared by the solution processed method was fabricated at room temperature. The sandwich structure memory device shows high reproducibility, good data retention ability, and light assisted multilevel storage capability. The resistance ratio (ON/OFF) of the RRAM device between the high resistance state and the low resistance state reaches almost 107. Additionally, the device exhibits high performances under low power consumption—low reading voltage (−0.3 V) and operation voltage (−2.4 V/1.55 V). It is suggested that the connection and rupture of conducting filaments, which are formed by Br vacancies under an electric field, are responsible for the resistive switching effect. Our work provides an opportunity to develop the next generation high-performance and stable nonvolatile memory devices.
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