Abstract
A light-addressable potentiometric sensing (LAPS) system has been applied to construct an oxygen sensor using a suspended-gate electrode. The sensor principally consists of an MIS structure, i.e., suspended gate/air gap/LaF 3/SiO 2/Si. The use of the suspended gate makes it possible to realize a contactless sensing system, which provides a flexible structure to integrate multiple sensing elements on a single-chip semiconductor surface. The sensor shows a stable response at room temperature to oxygen partial-pressure changes in the range 0.25-1.0 atm. The fabrication conditions of the LaF 2 film are also discussed.
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