Abstract

Nanocrystals surface chemistry engineering offers a direct approach to tune charge carrier dynamics in nanocrystals-based photodetectors. For this purpose, we have investigated the effects of altering the surface chemistry of thin films of CsPbBr3 perovskite nanocrystals produced by the doctor blading technique, via solid state ligand-exchange using 3-mercaptopropionic acid (MPA). The electrical and electro-optical properties of photovoltaic and photoconductor devices were improved after the MPA ligand exchange, mainly because of a mobility increase up to 5 × 10−3 . The same technology was developed to build a tandem photovoltaic device based on a bilayer of PbS quantum dots (QDs) and CsPbBr3 perovskite nanocrystals. Here, the ligand exchange was successfully carried out in a single step after the deposition of these two layers. The photodetector device showed responsivities around 40 and 20 mA/W at visible and near infrared wavelengths, respectively. This strategy can be of interest for future visible-NIR cameras, optical sensors, or receivers in photonic devices for future Internet-of-Things technology.

Highlights

  • All-inorganic cesium lead halide perovskites, with formulation CsPbX3 (X = Cl, Br, I), have been proposed for a large number of optoelectronic applications because of their unique properties, such as a large optical absorption cross section and high photoluminescence quantum yield (PLQY) [1]

  • We have investigated the effects of altering the surface chemistry of thin films of CsPbBr3 perovskite nanocrystals produced by the doctor blading technique, via solid state ligand-exchange using 3-mercaptopropionic acid (MPA)

  • Thin films of CsPbBr3 perovskite nanocrystals (PNCs) with a thickness of 400 nm were deposited on borosilicate glass to measure PL (Figure 2a) and absorbance (Figure 2b) spectra before and after the MPA ligand exchange

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Summary

Introduction

All-inorganic cesium lead halide perovskites, with formulation CsPbX3 (X = Cl, Br, I), have been proposed for a large number of optoelectronic applications because of their unique properties, such as a large optical absorption cross section and high photoluminescence quantum yield (PLQY) [1] These materials, which were engineered as nanocrystals for the first time in 2015 [2], exhibit a relatively low concentration of defects [3] and enhanced endurance to ambient environment as compared to their organic–inorganic analogues [4], while it allows for a flexible bandgap tunability with narrow emission lines, being the ideal material for generation of light-emitting diodes (LEDs) and display applications [5]. While these configurations are arguably more complex, they facilitate the introduction of functional interfaces, which can increase the charge carrier selectivity at the contacts, enabling potentially higher detection performance

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