Ligand assisted growth of perovskite single crystals with low defect density

Ye Liu,Yanjun Fang,Shangshang Chen,Jinsong Huang,Xun Xiao,Ying Zhou,Zhenyi Ni,Xiaopeng Zheng

doi:10.1038/s41467-021-21934-6

Ye Liu, Yanjun Fang + Show 6 more

Open Access

PDF Available

https://doi.org/10.1038/s41467-021-21934-6

Copy DOI

Export

Save

Cite

Abstract
Highlights/Summary
Full-Text PDF
Similar Papers

Abstract

Listen

A low defect density in metal halide perovskite single crystals is critical to achieve high performance optoelectronic devices. Here we show the reduction of defect density in perovskite single crystals grown by a ligand-assisted solution process with 3‐(decyldimethylammonio)‐propane‐sulfonate inner salt (DPSI) as an additive. DPSI ligands anchoring with lead ions on perovskite crystal surfaces not only suppress nucleation in solution, but also regulate the addition of proper ions to the growing surface, which greatly enhances the crystal quality. The grown CH3NH3PbI3 crystals show better crystallinity and a 23-fold smaller trap density of 7 × 1010 cm−3 than the optimized control crystals. The enhanced material properties result in significantly suppressed ion migration and superior X-ray detection sensitivity of CH3NH3PbI3 detectors of (2.6 ± 0.4) × 106 µC Gy−1air cm−2 for 60 kVp X-ray and the lowest detectable dose rate reaches (5.0 ± 0.7) nGy s−1, which enables reduced radiation dose to patients in medical X-ray diagnostics.

Highlights

A low defect density in metal halide perovskite single crystals is critical to achieve high performance optoelectronic devices
We chose one molecule previously studied for surface passivation on Metal halide perovskite (MHP) thin film solar cells, 3‐(Decyldimethylammonio)‐propane‐sulfonate inner salt (DPSI), because it passivates defects in MHP polycrystalline grains, and modulates the grain size in the polycrystalline films[28]
The MAPbI3 single crystals were grown using the inverse temperature crystallization (ITC) method where crystals precipitate from MAPbI3 precursor solutions after they were heated to a growth temperature which is dependent on the precursor concentration[25,29]

Summary

Introduction

A low defect density in metal halide perovskite single crystals is critical to achieve high performance optoelectronic devices. Our method of changing crystal growth kinetics and reducing defect density is to introduce some organic molecules which have strong interaction with ions on the surface of perovskite crystals to regulate the addition of precursor ions onto the crystals.

Results

Conclusion