Abstract
We demonstrate reproducible formation of mesoporous germanium layers suitable for solar energy applications by electrochemical etching in highly concentrated electrolytes. For long anodization times or thick layer formation a porosity gradient is observed leading eventually to high porosity regions and cavity formation at the bottom of the porous layer. A 30 min annealing step at a temperature of 575°C in hydrogen atmosphere allows for reorganization and subsequent lift-off. The mean surface roughness increases from 0.31 nm for unprocessed Ge up to 7.85 nm for reorganized Ge as measured by atomic force microscopy. μ-Raman confocal spectroscopy analysis confirms that etching and annealing do not affect the crystalline structure.
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