LIF investigations of the surface chemistry in the dry processing of semiconductor devices : O. N. Singh and H. J. Hopman. Microelectron. J.18 (2), 39 (1987)

Abstract

Managing the emerging internal mechanical stress in chips, particularly if they are 3D stacked, is a key task to maintain performance and reliability of microelectronic products. Hence, a strong need of a physics-based simulation methodology emerges. This physics-based simulation, however, requires material parameters with high accuracy. A full-chip analysis can then be performed, balancing the need for local resolution and computing time. The key for an efficient simulation of a 3D stacked IC is a comprehensive database with material properties for multiple scales of the affected materials. Therefore, effective “composite-type” material data for several regions of interest are needed. Advanced techniques to measure FEA- and design-relevant properties such as adhesion properties and effective CTE values are presented.