Abstract
Li planar-doped ZnSe epilayers were grown by molecular beam epitaxy. The saturation of the acceptor doping level was revealed ( Na-Nd∼1×1017 cm-3). Exciton emissions bound to Zn vacancy were observed in the planar-doped epilayers, which suggests the escape of Li atoms from the planar-doped layers. Emission intensities of the exciton bound to Li acceptor were increased by the planar doping compared with those in homogeneously doped samples.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
