LET and Range Characteristics of Proton Recoil Ions in Gallium Nitride (GaN)

Abstract

A better understanding of the linear energy transfer (LET) and the range of proton recoil ions in gallium nitride (GaN) is necessary to properly evaluate GaN device radiation tolerance. By analyzing the LET and range of recoil heavy ions in GaN, we can begin to reproduce the body of knowledge that exists for Si-based devices for this upcoming technology. Although the previous data on older technology has impressive depth and breadth, we must be diligent and cautious in the application of these institutional intuitions when applied to emerging technologies such as GaN. As ever increasing materials science advances emerge, a sound methodology for evaluating new technologies must be established in order to apply what we know toward the effort of ensuring radiation tolerance.