Abstract
Length-controlled indium nitride (InN) nanowires are grown by localized laser-assisted metal organic vapor phase epitaxy. Laser irradiation results in spatially confined, rapid heating that enables precise nucleation control and subsequent nanowire growth. This localization of the laser-driven growth can realize on-demand and site-selective direct synthesis of length-controlled nanowires on catalytic gold nanodots. The length of the InN nanowires is controlled by the laser irradiation time at a fixed power. Energy dispersive X-ray, Raman and photoluminescence spectroscopic analyzes respectively characterize the elemental composition, crystallinity, and emission properties of as-grown InN nanowires.
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