Abstract
InP crystals were grown by the liquid encapsulated Czochralski (LEC) technique, in which the starting materials in a pBN crucible were previously encapsulated with B2O3 using an outer vacuum vessel. The electrical properties throughout the LEC-grown InP crystals were improved by using the pre-encapsulated starting materials. This is due to the reduced incorporation into the crystals of impurities such as S and C, which are evaporated from carbon heater and radiation shield materials.
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