Abstract
The accurate characterization of highly leaky dielectrics has been a serious challenge in MOSFET and capacitor studies. We have shown that time domain reflectometry (TDR) can be used to measure the capacitance of ultrathin SiO2 MOS capacitors even at a leakage current density as high as ∼3000 A/cm2, which is approximately 103 times higher than the limit of a conventional impedance analyzer. The extremely short interaction time of the TDR C–V method makes the TDR capacitance measurement more immune to the leakage current. Since the TDR C–V method does not require special high-frequency test structures other than a ground-signal pad pattern, the TDR C–V method is a promising capacitance measurement method for leaky dielectrics.
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