Leakage current in a Si-based nanopore structure and its influence on noise characteristics

Abstract

We have measured leakage current in a silicon substrate-based nanopore membrane device immersed in an aqueous environment which typically shows the current level of few nA. This current level is compared with the measured current density (400 nA/cm2 at 1 V) from the pristine Si wafer (p-type, 1016/cm3 boron doping) indicating that the exposed Si surface in a nanopore membrane device acts as an electrochemical reaction site. The leakage current is drastically reduced from >10 nA to <100 pA at 1 V by the deposition of a dielectric layer to the Si-based nanopore membrane device. We also noted that the root-mean-square noise of the ionic current is also reduced from 38 to 28 pA in correlation with the reduction of leakage current, indicating that electrochemical reaction provides one of the major sources of noise.