Abstract
The polycrystalline Mn 1% doped BFO (BFMO) thin film was deposited on Pt(111)/Ti/SiO2/Si(100) substrate by pulsed laser deposition. A thin SrTiO3 capping layer was grown on top of deposited Bi(Fe0.99Mn0.01)O3 thin film. The structural and electrical properties of STO/BFMO thin film were investigated. By capping a thin STO on top of BFMO, leakage current density of capacitor was improved greatly compare to that of the pure BFMO without degrading ferroelectricity.
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