Abstract

Lanthanum-doped Bi 2Ti 2O 7 thin films have been prepared using chemical solution deposition method, and then treated by different annealing temperatures. X-ray diffraction analysis confirmed that the crystallinity of the films increased with increasing annealing temperature and the optimum temperature was found to be 800 °C. The effects of relaxation time and various annealing temperatures and films thickness on the leakage current density were investigated. The results showed that the film annealed at 800°C had good insulating properties and can be considered using in advanced MOS transistors.

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