Abstract
Due to the tremendous increase in the call of handheld devices like mobile, iPods and tablets; certain applications like space and biomedical, it is necessary to have low power consuming digital systems. As a crucial part in digital systems,Static Random Access Memory(SRAM) should consume low power since it occupies about 70% of the total chip area. As the technology is shrinking, SRAM’s leakage power in standby condition is becoming a most critical concern for the low power applications. This paper gives a study of different leakage components present in SRAM and discusses about various current reduction techniques which include Gated VDD, MTCMOS, Dual threshold and Transistor Stacking.
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