Abstract
Halide perovskites with one-dimensional nanowire structure have attracted more attention in the photodetectors (PDs) due to their single crystal nature and large aspect ratio. Although the network structure of perovskite nanowires (PNs) has become an important research object due to its simple solution process and good repeatability, it presents the cross-connection of nanowires, which hinders the transport of carriers, resulting in poor device performance. Herein, we introduced a hot-pressure welding strategy to reduce the micro-interfaces of the all-inorganic lead-less perovskite alloy nanowire network, greatly enhance the quality of the PNs and improve the device performance. To optimize the device performance, the hot-pressure strategy with different pressures was carried out. Finally, we demonstrated the all-inorganic CsPb0.01Sn0.99I3 PNPD with a responsivity, a detectivity and a linear dynamic range of 9.9 × 10−3 A W−1, 7.2 × 108 Jones and 73 dB at 473 nm, respectively. These results lay the foundation for improving the device performance of the Pb-free perovskite nanowire devices.
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