Abstract
The efficiency of photovoltaic systems of perovskite materials based on organic–inorganic halide has increased and they are nearing commercialization. Lead-free perovskite materials have recently attracted the interest of researchers and the scientific community due to the toxicity issue and harmful lead-based perovskite materials. Tin, like lead (Pb) is a group 14 metals; hence, it is the most likely substitute. We use SCAPS-1D numerical simulation to optimize the device efficiency of a lead-free n-i-p based planar hetrostructure perovskite solar cell composed of intrinsic-CH3NH3SnI3 methyl ammonium tin iodide (MASnI3) as an i- and p-layer Spiro-OMeTAD with SnO2 for the n layer. Conclusions show that the absorber layer has a thickness of 600 nm, which is required for optimal cell performance and efficiency. The thickness and defect density of this absorber layer was taken into account, absorption coefficient is inversely proportional to defect density. The performance of device worsens when the defect density of absorber layer increases. The thickness and defect density of absorber layer was carefully tuned to get maximum solar cell performance and we observed an efficiency of 22.21 %, current density (JSC) of 33.8636 mA/cm2, VOC of 0.989 V and FF of 66.33 % at 600 nm thickness of absorber layer.
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