Device simulation of highly efficient eco-friendly CH3NH3SnI3 perovskite solar cell

Piyush K Patel

doi:10.1038/s41598-021-82817-w

Abstract

Photoexcited lead-free perovskite CH3NH3SnI3 based solar cell device was simulated using a solar cell capacitance simulator. It was modeled to investigate its output characteristics under AM 1.5G illumination. Simulation efforts are focused on the thickness, acceptor concentration and defect density of absorber layer on photovoltaic properties of solar cell device. In addition, the impact of various metal contact work function was also investigated. The simulation results indicate that an absorber thickness of 500 nm is appropriate for a good photovoltaic cell. Oxidation of Sn2+ into Sn4+ was considered and it is found that the reduction of acceptor concentration of absorber layer significantly improves the device performance. Further, optimizing the defect density (1014 cm−3) of the perovskite absorber layer, encouraging results of the Jsc of 40.14 mA/cm2, Voc of 0.93 V, FF of 75.78% and PCE of 28.39% were achieved. Finally, an anode material with a high work function is necessary to get the device's better performance. The high-power conversion efficiency opens a new avenue for attaining clean energy.

Highlights

Photoexcited lead-free perovskite CH3NH3SnI3 based solar cell device was simulated using a solar cell capacitance simulator
Due to the junction field electrons and holes move towards electron transport layer (ETL) and hole transport layer (HTL), respectively
The previously published report shows that the photovoltaic parameters such as Jsc, Voc, fill factor (FF) and power conversion efficiency (PCE) are influenced by the absorber layer thickness[27,39]

Summary

Introduction

Photoexcited lead-free perovskite CH3NH3SnI3 based solar cell device was simulated using a solar cell capacitance simulator. HTL needs high hole carrier mobility and should form a less defect at the HTL/absorber layer to minimize the charge carriers recombination at the interface. To obtain the performance parameters of the device like current density–voltage (J-V) curve, quantum efficiency and energy bands, Poisson Eq (1) is solved with continuity equation of electron (2) and hole (3).

Results

Conclusion