Abstract
Pb(Zr0.53Ti0.47)O3 (PZT) thin films with thickness near 0.8 μm were prepared on LaNiO3 buffered Ti, NiCr and stainless steel (SS) substrates by the sol–gel methods. PZT thin films crystallized into the perovskite structure at temperatures of ≥550 °C. The room-temperature dielectric constant, tanδ, remnant polarization and coercive field achieved of 433, 0.03, 20 μC/cm2 and 50 kV/cm, respectively, for PZT thin films prepared on the NiCr substrate. The Curie temperature of PZT thin films on Ti, NiCr and SS was determined to be 330, 360 and 410 °C, respectively.
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