Abstract
Lanthanum modified lead titanate ferroelectric thin films with a composition Pb 0.7 La 0.2 TiO 3 have been prepared by a diol based sol-gel technique. The effect on the film structure, microstructure and composition of the initial PbO content, from the nominal value to an excess of 20 mole%, and of the heating rate of the thermal treatment of crystallisation at 650°C, from 10°C min -1 to more than 500°C min -1 , has been studied. It is not possible to obtain single phase films with the treatment at 10°C min - 1 , even when PbO volatilisation is compensated with an initial excess of PbO of 20 mole%. It is possible with the treatment at more than 500°C min - and the latter excess of PbO. These films present a relative dielectric permittivity at room temperature of e= 700, and a variation between room temperature and 100°C of Δe= 75, being both parameters very interesting for DRAMs.
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