Lead sulfide quantum dot-linear low-density polyethylene composites for near-infrared Mini-LEDs

Abstract

Lead sulfide quantum dots (QDs), presenting near-infrared (NIR) emissions, have gained extensive interest within the realm of NIR light-emitting diodes (LEDs). However, the intricate surface defect passivation poses a major impediment that curbs broader applications of PbS QDs. To address it, we introduce linear low-density polyethylene (LLDPE) as a facilitating agent for the aggregation of PbS QDs, aiming to improve their optical properties by harnessing a stress-inducing effect. Compared to the bare PbS QDs that are luminescence silent, the PbS aggregates formed with the addition of LLDPE show a notable photoluminescence quantum yield (PLQY) as high as 20.7 %. Moreover, the presence of LLDPE mitigates the oxidative degradation of lead ions on the PbS QD surface, thereby enhancing the stability of the PbS QDs through steric hindrance. Near-infrared nini-LEDs are demonstrated by combining the PbS QD/LLDPE composites with blue mini-LED chips, which show an emission maximum of 1517.9 nm, a full width at half maximum (FWHM) of 297.6 nm and an energy conversion efficiency (ECE) of 14.6 %. The proposed method opens up new avenues for enhancing the optical properties of PbS QDs without using traditional passivation procedures.