Abstract
An improved method is described for the sol–gel preparation of PLZT thin layers in the perovskite structure. The method uses a PbO cover coat. Details are reported for the sol‐gel processing route and heat‐treatment conditions. Through use of this method it is possible to prepare singlephase perovskite material with improved properties. The deleterious effect of additional phases—which are not present when a PbO cover coat is used—is attributed to Pb loss from the surface during thermal processing. Examples are given for PLZT thin layers integrated on Si with and without a PbO cover coat. The dielectric and ferroelectric properties were always found to be superior for coated structures.
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