Abstract
PLZT thin films were deposited on 6-inch Pt/Ti/SiO2/Si substrates by radio frequency (RF) magnetron sputtering using a multichamber type production system. The lead (Pb) content in low temperature deposited PLZT films was measured by ICP spectroscopy and structural properties of rapid thermally annealed PLZT films were characterized by X-ray diffraction and scanning electron microscopy. It is found that several sputtering parameters such as RF power, argon (Ar) gas flow and magnetic field were very effective to control the Pb content which is essential for obtaining good ferroelectric properties.
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