Characterization of the Ba(Sn xTi 1− x)O 3 thin films prepared by radio frequency magnetron sputtering

Abstract

Ba(Sn x Ti 1− x )O 3 (BS x T 1− x ) thin films prepared by radio frequency (RF) magnetron sputtering in a mixture of O 2/Ar atmosphere have been characterized as a function of RF power. The BS x T 1− x thin films are amorphous when sputtered at RF power = 100 and 125 W. The XRD shows only single perovskite structure phase of BaTiO 3. The intensity of reflection increases with RF power increases from 125 to 175 W. The BS x T 1− x thin films sputtered with RF power at 150 W produced maximum deposition. The effect of the RF power on the Sn/(Sn + Ti) ratio is not significant. The refractive index of the BS x T 1− x thin films increases with increasing RF power. The dielectric constant of the BS x T 1− x thin films increases with increasing Sn content for films sputtered at the same RF power. On the other hand, the dielectric constant of the BS x T 1− x thin films increases when the RF power is increased from 100 to 150 W, but the dielectric constant decreases for RF power greater than 150 W.