Abstract
Infrared detection technology plays an important role in remote sensing, imaging, monitoring, and other fields. So far, most infrared photodetectors are based on InGaAs and HgCdTe materials, which are limited by high fabrication costs, complex production processes, and poor compatibility with silicon-based readout integrated circuits. This hinders the wider application of infrared detection technology. Therefore, reducing the cost of high-performance photodetectors is a research focus. Colloidal quantum dot photodetectors have the advantages of solution processing, low cost, and good compatibility with silicon-based substrates. In this paper, we summarize the recent development of infrared photodetectors based on mainstream lead chalcogenide colloidal quantum dots.
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