Abstract
This chapter reviews the present status and possible future developments of QDIPs. An emphasis is put on potential developments of both epitaxial and colloidal quantum dot photodetectors. At the beginning, the design and fabrication of QDIPs is shortly described. Next, the detector characterization and fundaments of detection mechanisms for QDIPs are presented.In the past decade, there has been significant progress in development of colloidal quantum dot (CQD) photodetectors. For their potential advantages can be included: cheap and easy fabrications, size-tunable across wide infrared spectral region, and direct coating on silicon electronics for imaging, what potentially reduces array cost and offers new modifications like flexible infrared detectors.Investigation of the performance of QDIPs is compared to other types of infrared photodetectors. A model is based on fundamental performance limitations enabling a direct comparison between different infrared material technologies. The main evaluation is directed toward high operating temperature (HOT) photodetectors.
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