Abstract
종래의 LDMOS를 사용한 전력증폭기는 AB-급 및 도허티 방식으로 60MHz 대역폭의 협대역에서 55%의 효율을 보여주고 있으나, 기지국의 전력증폭 모듈의 RRH의 적용에 따라 100MHz이상의 대역확장과 60%이상의 고효율 전력증폭기를 요구하고 있으므로, 본 연구에서는 LDMOS FET를 이용한 J-급 전력증폭기를 설계하여 200MHz대역에서 60%이상의 고효율 특성을 나타내었다. 설계한 J-급 전력증폭기는 2차 고조파 부하가 순수한 리액턴스 성분만을 포함하고 작은 양호도 Q 값을 갖도록 출력단 정합회로를 최적화 시켰다. 측정결과 WCDMA 주파수 대역을 포함한 2.06~2.2GHz에서 연속파 신호를 입력하였을 때 62~70%의 전력 부가효율(PAE)의 특성을 갖는 10W급 J-급 전력증폭기를 구현하였다. Existing LDMOS power amplifier that used class-AB and doherty system shows 55% of efficiency in 60MHz narrow band. Because RRH has been applied to power amplifier at base station. It is required that over 100MHz expanded band and more than 60% high efficiency power amplifier. In this paper we designed class-J power amplifier using LDMOS FET which has over 60% high efficiency characteristic in 200MHz. The output matching circuit of designed class-J power amplifier has been optimized to contain pure reactance at second harmonic load and has low quality factor Q. As a measurement result of the amplifier, when we input continuous wave signal, we checked 62~70% of power added efficiency(PAE) in 2.06~2.2GHz including WCDMA frequency as a 10W class-J power amplifier.
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