Layer-by-layer growth and island formation in CdSe/ZnSe heteroepitaxy

Abstract

Layer-by-layer epitaxial growth of CdSe on ZnSe has been observed at temperatures as low as 170–240 °C. Beyond this range, Reflection high energy electron diffraction (RHEED) specular spot intensity oscillations disappear, signifying a multilayer growth mode. While conventional epitaxial growth of CdSe at ∼300 °C results in formation of a rough layer-like structure, a method combining the epitaxial growth of a quasi-two-dimensional (2D) CdSe layer at 230 °C and subsequent annealing at 310 °C induces the formation of discrete CdSe quantum dots (QDs). Here we show that the formation of QDs by this method relies essentially on the layer-by-layer growth of CdSe at 230 °C, which allows an induced roughening of the as-grown 2D layer, during the subsequent annealing step. The layer-by-layer growth mode results possibly due to the nucleation of small and irregular precursor 2D clusters during growth at low temperatures, at the kink sites of which potential barriers for downward inter-layer transport of adatoms is low/absent.