Abstract
Composite materials of the polymer and inorganic dielectric material have been investigated due to synergistic effect of both flexible properties of the polymer and dielectric properties of the inorganic material. In this study, poly(methyl methacrylate-co-methacrylic acid)/titanium dioxide (PMMA-co-MAA/TiO2) bilayer films were fabricated using a spin coating method followed by a self assembled sol-gel process and then examined for a gate dielectric application of the OTFT. Fracture and surface morphologies of the bilayer film on silicon wafer was observed via both SEM and AFM. Dielectric constant of the composite film synthesized was found to be larger than that of pure polymer film. In addition, with pentacene as a conducting layer, device performance of the composite film was characterized, and it was found that the threshold gate voltage was reduced while the field induced current was increased.
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