Abstract
Layer-by-layer etching of LaAlSiOx using surface modification and selective removal steps was investigated. Selective removal of the LaAlSiOx layer modified by H2 plasma treatment was achieved by bias-power-adjusted C4F8/Ar plasma treatment. Self-limiting etching of LaAlSiOx with respect to the C4F8/Ar plasma step time was realized by initializing the chamber condition using O2 plasma. It was possible to control the saturation etching depth by changing the ion energy of the H2 plasma treatment. The repeatability of the self-limiting etching was confirmed, and the etching depth per cycle was about 0.6 nm. Layer-by-layer etching of LaAlSiOx was thus successfully realized using a three-step sequential process employing H2, C4F8/Ar and O2 plasmas.
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