Abstract
Seeking a material to replace copper (Cu) is essential because the high electron mean free path of Cu has remarkedly increased the resistivity of the interconnect when devices are continuously scaled down. This study aims to deposit a low electron mean free path cobalt (Co) alloy film strengthened by lightly doping nickel (Ni) in a layer-by-layer manner using an automatic electrochemical atomic layer deposition methodology. Through sequential underpotential deposition (UPD) of Co followed by surface-limited redox replacement (SLRR) of Ni, yielding an approximate monolayer, a film with a controlled composition of Co(Ni) can be deposited by modulating the termination time during the open circuit of SLRR-Ni. The nucleation mechanism correlated with the surface morphology was studied to elucidate electrical resistivity of the Co(Ni) film. The Co(Ni) film with 3.9 at.% Ni yields the low electrical resistivity of 27.72 μΩ-cm. The Co(Ni) film displays high breakdown strength, supporting its capability as an interconnecting material for next generation metallization beyond Cu.
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