Abstract
The reliability of semiconductor materials with electrical and optical properties are connected to their structures. The elastic strain field and tilt analysis of the crystal lattice, detectable by the variation in position and shape of the diffraction peaks, is used to quantify defects and investigate their mobility. The exploitation of high-resolution X-ray diffraction-based methods for the evaluation of structural defects in semiconductor materials and devices is reviewed. An efficient and non-destructive characterization is possible for structural parameters such as, lattice strain and tilt, layer composition and thickness, lattice mismatch, and dislocation density. The description of specific experimental diffraction geometries and scanning methods is provided. Today's X-ray diffraction based methods are evaluated and compared, also with respect to their applicability limits. The goal is to understand the close relationship between lattice strain and structural defects. For different material systems, the appropriate analytical methods are highlighted.
Highlights
The relationship between lattice strain, residual stress, and defects is fundamental since they are closely connected to eachCrystal lattice stress/strain, aging, degradation, and reliability are other
High-resolution X-ray diffraction (HRXRD) is a powerful technique for the accurate analysis of sometimes very small changes in materials structural properties being related to the generation, propagation, and mobility of defects such as, dislocations, grain boundaries, etc, within the crystalline lattice
We explored the classification of crystalline defects, their origin and evolution, and the influence on the electrical and optical properties
Summary
The relationship between lattice strain, residual stress, and defects is fundamental since they are closely connected to eachCrystal lattice stress/strain, aging, degradation, and reliability are other. The crystal lattice in the vicinity of a defect Stress/strain are often used cause the broadening of the diffraction peaks. This effect is as a design parameter for improving the mobility of electrons.[1] known as microstrain and it depends on the non-uniform lat-. Since the elastic strain field around dislocations mechanical effects in semiconductor physics.[2] Subsequently decays very slow from the dislocation core, the entire ensemble of dislocations contributes to X-ray scattering.[20,21,22] S. Neels when a uniform stress extends over the entire lattice, the lat-
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