Abstract
Double-heterostructure (DH) diode lasers consisting of a GaSb active layer and lattice-matched Al0.3Ga0.7As0.02Sb0.98 cladding layers have been grown by metal organic vapour phase epitaxy (MOVPE). The devices operate at room temperature (λ ≃ 1.75 µm) with a pulsed threshold current density of 2.1 kA/cm2 for a 1000 µm long laser. This result is a significant improvement over the 7.5 kA/cm2 obtained for lattice-mismatched GaSb/AlGaSb DH lasers, the only other reported lasers containing AlSb-based alloys grown by MOVPE.
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