Abstract
The substitutional fraction (${f}_{s}$) of 0.1 at.?Ce in vanadium depends on the lattice temperature during implantation and is 0.73, 0.73, and 0.15 at 5, 77, and 300 K, respectively. Increasing the implanted Ce concentration at 300 K to 3.3 at. ?eads to an increase of ${f}_{s}$ from 0.15 to 0.66. Postirradiation of VCe systems as produced at 300 K with He ions at 77 K leads to an increase of ${f}_{s}$. If the postirradiated systems are warmed up to room temperature ${f}_{s}$ decreases. It is concluded that Ce-vacancy clusters are formed within the prompt cascade regime and by trapping mobile vacancies. Pre- and postimplantation experiments proved that the increase of ${f}_{s}$ with Ce concentration is due to cluster dissolution accompanied by the formation of competing vacancy-trapping centers.
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