Abstract
Various ions have been implanted into vanadium single crystals at substrate temperatures T I of 5, 77 and 300 K and the lattice location was determined in situ at these temperatures using the channeling technique. While RT-implanted species from group III a to VII a had a high substitutional solubility, those of groups I a, II a and III b (Cs, Ba, La) were relatively insoluble in V. After implantation at low temperatures however Cs, La and Ba revealed substitutional fractions of 0.65, 0.58 and 0.40 respectively. The results are interpreted in terms of size-mismatch energy and vacancy trapping processes in the cascade.
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