Abstract
The lattice positions of solute atoms in metals and semiconductors were determined by the ion channeling method, and were related to interactions of the solute atoms with point defects and other solute atoms. Examples are given utilizing the techniques of Rutherford backscattering, nuclear reactions and characteristic X-rays. The following configurations are discussed: AlCu mixed dumbbells in Al, tetravacancy—In atom complexes in Al, In atom—As atom pairs in Si, split B interstitials in Si, octahedral and near-octahedral sites for N and D in Fe, and Zn-divacancy complexes in InP.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
