Abstract
The lattice positions of solute atoms in metals and semiconductors were determined by the ion channeling method, and were related to interactions of the solute atoms with point defects and other solute atoms. Examples are given utilizing the techniques of Rutherford backscattering, nuclear reactions and characteristic X-rays. The following configurations are discussed: AlCu mixed dumbbells in Al, tetravacancy—In atom complexes in Al, In atom—As atom pairs in Si, split B interstitials in Si, octahedral and near-octahedral sites for N and D in Fe, and Zn-divacancy complexes in InP.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
