Lattice Location of Implanted 147 Nd and 147* Pm in GaN Using Emission Channeling

Abstract

The lattice location of 147Nd and 147*Pm in thin-film, single-crystalline hexagonal GaN was studied by means of the emission channeling technique. The angular emission yields of β— particles and conversion electrons emitted by the radioactive isotopes 147Nd and 147*Pm were measured using a position-sensitive detector following 60 keV room temperature implantation at a dose of 1 × 1013 cm—2 and annealing at 900 °C. The emission patterns around the [0001], [102], [101], and [113] crystal axes give direct evidence that the majority (≈70%) of Nd and Pm atoms occupy substitutional Ga sites.